Crucial DDR4 Server Memory

More speed. More bandwidth. More efficient.

Next generation DDR4 memory is here.

Overcome one of your greatest server limitations: memory. From networking, cloud computing, and virtualization to HPC, Big Data and more, memory-dependent server applications require increasingly higher densities of memory and higher levels of performance than are attainable on current DDR3 technology. Enter Crucial® DDR4 server memory.

2x the Speed

Process data faster and double memory bandwidth to up to 17 GB/s. With Crucial DDR4 memory, introductory data rates start at 2133 MT/s and get even faster as the technology matures, compared to introductory DDR3 rates of 1066 MT/s. Crucial DDR4 memory also delivers faster burst access speeds for improved sequential data throughput by utilizing four channel memory architecture that’s unique to DDR4 technology.

2x the Capacity

Maximize system performance by doubling memory capacity. As DDR4 memory technology matures, it will allow you to double your server's memory capacity and get more out of every module — and your entire network. Built using advanced technology that allows more gigabits per component, Crucial DDR4 memory is designed to utilize higher density components, allowing us to deliver DDR4 modules that are up to twice as dense.

Up to 40% More Energy Efficient

Reduce power and cooling expenses. Crucial DDR4 memory uses 20% less voltage than DDR3 technology, and operates at just 1.2V compared to 1.5V for standard DDR3 server memory. Combined with the additional power-saving features inherent in DDR4 memory architecture, Crucial DDR4 memory is able to deliver up to 40% power savings compared to standard DDR3 technology. Also, since less heat is generated per module, it's easier to keep systems cool.

Enhance cloud computing, Big Data, HPC, and more

For memory-dependant server applications such as virtualization, cloud computing, Big Data, and HPC, Crucial DDR4 server memory is an ideal way to increase memory bandwidth and capacity, while also reducing power expenses. Since memory often functions as a fixed (non-shared) component, it's one of the biggest performance constraints for data centers. Maximize DDR4 memory capacity and achieve next generation performance and efficiency. Crucial DDR4 memory is optimized for future Intel® Xeon® processor E5-2600 v3 product family, allowing you to handle diverse enterprise workloads with ease.

Introduction of DDR4 Crucial Server Memory

	ECC UDIMM	RDIMM / VLP RDIMM	LRDIMM
Application/Server Market Segments	Web hosting Digital conent creation Small office server Dedicated server	HPC Cloud Computing Virtualization Financial Analysis	BIG DATA In-memory databases Life Sciences Climate Modeling
Advantages	Most cost efficient Most basic type of module Low latency and power consumption Limited in density	Greatest volume and availability Higher densities Minimal increase in power consumption and latency	Maximum server capacity Rank multiplication Highest density
Module specs	4GB, 8GB and 16GB densities² 2133MT/s at 1.2V ECC SODIMM available (micro servers)	4GB - 128GB densities² (RDIMM) 8GB - 64GB densitites² (VLP RDIMM) 2133MT/s at 1.2V Single, Dual, Quad and Octo Rank	16GB - 128GB densities² 2133MT/s at 1.2V Quad and Octo Rank

DDR3 vs. DDR4

Feature/Option	DDR3	DDR4	DDR4 Advantage
Voltage (core and I/O)	1.5V	1.2V	Reduces memory power demand
Low voltage standard	Yes (DDR3L at 1.35V)	Anticipated (likely 1.05V)	Memory power reductions
Data rate (Mb/s)	800, 1066, 1333, 1600, 1866, 2133	1600, 1866, 2133, 2400, 2667, 3200²	Migration to higher-speed I/O
Component Densities	512MB-8GB	2GB-16GB²	Better enablement for large-capacity memory subsystems
Module Densities	512MB-64GB	2GB-128GB²	Increased total module density for each system
Internal banks	8	16	More banks

Introductory lineup - Crucial DDR4 Server Memory²

Part Number	Module Type	Density	Speed	Rank	Voltage	Comp Config	CAS Latency
CT8G4TFD8213	ECC SODIMM 260-pin	8GB	2133MT/s	Dual	1.2V	512M x 8	CL15
CT4G4WFS8213	ECC UDIMM 288-pin	4GB	2133MT/s	Single	1.2V	512M x 8	CL15
CT8G4WFD8213	ECC UDIMM 288-pin	8GB	2133MT/s	Dual	1.2V	512M x 8	CL15
CT4G4RFS8213	RDIMM 288-pin	4GB	2133MT/s	Single	1.2V	512M x 8	CL15
CT8G4RFS4213	RDIMM 288-pin	8GB	2133MT/s	Single	1.2V	1024M x 4	CL15
CT16G4RFD4213	RDIMM 288-pin	16GB	2133MT/s	Dual	1.2V	1024M x 4	CL15
CT32G4LFQ4213	LRDIMM 288-pin	32GB	2133MT/s	Quad	1.2V	1024M x 4	CL15
CT8G4VFS4213	VLP RDIMM 288-pin	8GB	2133MT/s	Single	1.2V	1024M x 4	CL15
CT16G4VFD4213	VLP RDIMM 288-pin	16GB	2133MT/s	Dual	1.2V	1024M x 4	CL15

Limited lifetime warranty valid everywhere except Germany and France, where warranty is valid for ten years from date of purchase. Note: Product performance and efficiency improvements are noted as comparisons between DDR3 and DDR4 memory technologies at their introduction. When it was introduced, DDR3-1066 operated at 1.5V and had an estimated component density of 8Gb, compared to DDR4-2133, which will operate at 1.2V and have an estimated component density of 16Gb. When voltage reductions and all other energy-saving DDR4 features are factored in, DDR4 modules are projected to consume up to 40% less power.
Note: Not all densitites and speeds will be available at launch. DDR4 densities and speeds will increase as DDR4 technology matures.
When you use our compatibility tools

All other trademarks used here are property of their respective owners.